THE DETERMINATION OF GRAIN-BOUNDARY RECOMBINATION RATES BY SCANNED SPOT EXCITATION METHODS

被引：66
作者：
SEAGER, CH
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 08期
关键词：
D O I：
10.1063/1.331389
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：5968 / 5971
页数：4
相关论文
共 15 条
[1]  
CAMPBELL DR, 1979, B AM PHYS SOC, V24, P435
[2]   INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].
DASH, WC ;
NEWMAN, R .
PHYSICAL REVIEW, 1955, 99 (04) :1151-1155
[3]   DETERMINATION OF KILOVOLT ELECTRON ENERGY DISSIPATION VS PENETRATION DISTANCE IN SOLID MATERIALS [J].
EVERHART, TE ;
HOFF, PH .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) :5837-&
[4]  
FAUGHNAN BW, 1980, NOV SOL EN RES I POL
[5]  
PIKE GE, 1981, ADV CERAM, V1, P53
[6]   EXTENSION OF A THEOREM USED IN THE INVESTIGATION OF P-N-JUNCTIONS WITH THE SCANNING ELECTRON-MICROSCOPE TO ARBITRARY GEOMETRIES AND ARBITRARILY INHOMOGENEOUS MATERIAL [J].
ROOS, OV .
APPLIED PHYSICS LETTERS, 1979, 35 (05) :408-409
[7]  
Russell P. E., 1982, Grain Boundaries in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P185
[8]   GRAIN-BOUNDARY RECOMBINATION - THEORY AND EXPERIMENT IN SILICON [J].
SEAGER, CH .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :3960-3968
[9]   PASSIVATION OF GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON [J].
SEAGER, CH ;
GINLEY, DS .
APPLIED PHYSICS LETTERS, 1979, 34 (05) :337-340
[10]   GRAIN-BOUNDARY STATES AND VARISTOR BEHAVIOR IN SILICON BICRYSTALS [J].
SEAGER, CH ;
PIKE, GE .
APPLIED PHYSICS LETTERS, 1979, 35 (09) :709-711
12