THE DETERMINATION OF GRAIN-BOUNDARY RECOMBINATION RATES BY SCANNED SPOT EXCITATION METHODS

[1] CAMPBELL DR, 1979, B AM PHYS SOC, V24, P435

[2] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[3] DETERMINATION OF KILOVOLT ELECTRON ENERGY DISSIPATION VS PENETRATION DISTANCE IN SOLID MATERIALS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5837 - &

[4] FAUGHNAN BW, 1980, NOV SOL EN RES I POL

[5] PIKE GE, 1981, ADV CERAM, V1, P53

[6] EXTENSION OF A THEOREM USED IN THE INVESTIGATION OF P-N-JUNCTIONS WITH THE SCANNING ELECTRON-MICROSCOPE TO ARBITRARY GEOMETRIES AND ARBITRARILY INHOMOGENEOUS MATERIAL [J]. APPLIED PHYSICS LETTERS, 1979, 35 (05) : 408 - 409

[7] Russell P. E., 1982, Grain Boundaries in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P185

[8] GRAIN-BOUNDARY RECOMBINATION - THEORY AND EXPERIMENT IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 3960 - 3968

[9] PASSIVATION OF GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 34 (05) : 337 - 340

[10] GRAIN-BOUNDARY STATES AND VARISTOR BEHAVIOR IN SILICON BICRYSTALS [J]. APPLIED PHYSICS LETTERS, 1979, 35 (09) : 709 - 711

[1] CAMPBELL DR, 1979, B AM PHYS SOC, V24, P435

[2] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[3] DETERMINATION OF KILOVOLT ELECTRON ENERGY DISSIPATION VS PENETRATION DISTANCE IN SOLID MATERIALS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5837 - &

[4] FAUGHNAN BW, 1980, NOV SOL EN RES I POL

[5] PIKE GE, 1981, ADV CERAM, V1, P53

[6] EXTENSION OF A THEOREM USED IN THE INVESTIGATION OF P-N-JUNCTIONS WITH THE SCANNING ELECTRON-MICROSCOPE TO ARBITRARY GEOMETRIES AND ARBITRARILY INHOMOGENEOUS MATERIAL [J]. APPLIED PHYSICS LETTERS, 1979, 35 (05) : 408 - 409

[7] Russell P. E., 1982, Grain Boundaries in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P185

[8] GRAIN-BOUNDARY RECOMBINATION - THEORY AND EXPERIMENT IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 3960 - 3968

[9] PASSIVATION OF GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 34 (05) : 337 - 340

[10] GRAIN-BOUNDARY STATES AND VARISTOR BEHAVIOR IN SILICON BICRYSTALS [J]. APPLIED PHYSICS LETTERS, 1979, 35 (09) : 709 - 711