IMPEDANCE, MODULATION RESPONSE, AND EQUIVALENT-CIRCUIT OF ULTRA-HIGH-SPEED IN0.35GA0.65AS/GAAS MQW LASERS WITH P-DOPING

被引：28

作者：

WEISSER, S ^{[1
]}

ESQUIVIAS, I ^{[1
]}

TASKER, PJ ^{[1
]}

RALSTON, JD ^{[1
]}

ROSENZWEIG, J ^{[1
]}

机构：

[1] UNIV POLITECN MADRID,DEPT TECHNOL ELECTR,CIUDAD UNIV,E-28040 MADRID,SPAIN

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 07期

关键词：

D O I：

10.1109/68.311453

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

On-wafer measurements of the frequency-dependent impedance, modulation response, and RIN power spectra of ultra-high-speed p-doped In0.35Ga0.65As/GaAs MQW lasers are presented and analyzed. The experimental results are shown to be accurately modeled by an equivalent circuit which accounts for both the carrier transport/capture dynamics and the junction space-charge capacitance. We find that the carrier escape time out of the QW's in our laser structure is much larger than the carrier capture time, and therefore the interplay between carrier capture and re-emission is not affecting the high-speed modulation dynamics. On the other hand, the absolute values of both the carrier capture time and the space-charge capacitance still limit the modulation bandwidth.

引用

页码：782 / 785

页数：4

共 13 条

[1] HIGH-SPEED GAAS/ALGAAS OPTOELECTRONIC DEVICES FOR COMPUTER-APPLICATIONS [J].

HARDER, CS ;

VANZEGHBROECK, BJ ;

KESLER, MP ;

MEIER, HP ;

VETTIGER, P ;

WEBB, DJ ;

WOLF, P .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1990, 34 (04) :568-584

[2] INTRINSIC EQUIVALENT-CIRCUIT OF QUANTUM-WELL LASERS [J].

KAN, SC ;

LAU, KY .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (06) :528-530

[3] THE INTRINSIC ELECTRICAL EQUIVALENT-CIRCUIT OF A LASER DIODE [J].

KATZ, J ;

MARGALIT, S ;

HARDER, C ;

WILT, D ;

YARIV, A .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (01) :4-7

[4] EFFECTS OF CARRIER TRANSPORT ON RELATIVE INTENSITY NOISE AND CRITIQUE OF K-FACTOR PREDICTIONS OF MODULATION RESPONSE [J].

NAGARAJAN, R ;

ISHIKAWA, M ;

BOWERS, JE .

ELECTRONICS LETTERS, 1992, 28 (09) :846-847

[5] TRANSPORT LIMITS IN HIGH-SPEED QUANTUM-WELL LASERS - EXPERIMENT AND THEORY [J].

NAGARAJAN, R ;

FUKUSHIMA, T ;

ISHIKAWA, M ;

BOWERS, JE ;

GEELS, RS ;

COLDREN, LA .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (02) :121-123

[6] OPTICAL AND MICROWAVE PERFORMANCE OF GAAS-ALGAAS AND STRAINED LAYER INGAAS-GAAS-ALGAAS GRADED INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE SINGLE QUANTUM WELL LASERS [J].

OFFSEY, SD ;

SCHAFF, WJ ;

TASKER, PJ ;

EASTMAN, LF .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (01) :9-11

[7] FREQUENCY-RESPONSE OF 1.3-MU-M INGAASP HIGH-SPEED SEMICONDUCTOR-LASERS [J].

OLSHANSKY, R ;

HILL, P ;

LANZISERA, V ;

POWAZINIK, W .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (09) :1410-1418

[8] CONTROL OF DIFFERENTIAL GAIN, NONLINEAR GAIN, AND DAMPING FACTOR FOR HIGH-SPEED APPLICATION OF GAAS-BASED MQW LASERS [J].

RALSTON, JD ;

WEISSER, S ;

ESQUIVIAS, I ;

LARKINS, EC ;

ROSENZWEIG, J ;

TASKER, PJ ;

FLEISSNER, J .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (06) :1648-1659

[9] WELL-BARRIER HOLE BURNING IN QUANTUM-WELL LASERS [J].

RIDEOUT, W ;

SHARFIN, WF ;

KOTELES, ES ;

VASSELL, MO ;

ELMAN, B .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (09) :784-786

[10] MICROWAVE CIRCUIT MODELS OF SEMICONDUCTOR INJECTION-LASERS [J].

TUCKER, RS ;

POPE, DJ .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1983, 31 (03) :289-294

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