HIGH-DOSE OXYGEN IMPLANTATION INTO SILICA

被引：2

作者：

CHATER, RJ ^{[1
]}

KILNER, JA ^{[1
]}

REESON, KJ ^{[1
]}

ROBINSON, AK ^{[1
]}

HEMMENT, PLF ^{[1
]}

机构：

[1] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 55卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(91)96258-M

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

High doses of the stable oxygen-18 tracer isotope have been implanted at 200 keV into thick thermal oxide on silicon to study oxide sputtering in conditions similar to the formation of isolated silicon device islands by SIMOX. Final tracer distributions were obtained by secondary ion mass spectrometry confirming the high mobility of oxygen within the silica, diffusion coefficient 1.7 x 10(-12) cm-2 s-1, with rapid desorption of excess oxygen from the top silica surface after perfect isotopic exchange as the oxide layer remains at the stoichiometry of SiO2.

引用

页码：686 / 690

页数：5

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