THE OFFSET VOLTAGE OF HETEROJUNCTION BIPOLAR-TRANSISTORS USING 2-DIMENSIONAL NUMERICAL-SIMULATION WITH CURRENT BOUNDARY-CONDITION

被引：8
作者：
LIOU, LL
EBEL, J
HUANG, CI
机构：
[1] Solid State Electronics Directorate, Wright Laboratory, OH, Wright-Patterson Air Force Base
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 03期
关键词：
D O I：
10.1109/16.123506
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The offset voltage of an emitter-mesa AlGaAs/GaAs heterojunction bipolar transistor was obtained from the transistor's current-voltage characteristics calculated using a two-dimensional numerical simulation with a current boundary condition at the base contact. The results show that the offset voltage strongly depends on the position of the emitter-base p-n junction and on the width of the emitter mesa.
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页码：742 / 745
页数：4
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