ENHANCEMENT OF THE PLASMA-DENSITY AND DEPOSITION RATE IN RF DISCHARGES

[1] MICROWAVE INVESTIGATION OF PLASMAS PRODUCED IN A REACTOR [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) : 527 - +

[2] PULSED HIGH-RATE PLASMA-ETCHING WITH VARIABLE SI/SIO2 SELECTIVITY AND VARIABLE SI ETCH PROFILES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1095 - 1097

[3] MEASUREMENT OF THE ELECTRON-DENSITY AND THE ATTACHMENT RATE COEFFICIENT IN SILANE HELIUM DISCHARGES [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1344 - 1348

[4] ELECTRON KINETICS OF SILANE DISCHARGES [J]. APPLIED PHYSICS LETTERS, 1983, 43 (11) : 1012 - 1014

[5] GILLARDINI AL, 1972, LOW ENERGY ELECTRON, P236

[6] AN OPTICAL-EMISSION STUDY OF THE GLOW-DISCHARGE DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON FROM ARGON-SILANE MIXTURES [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2276 - 2280

[7] HYDROGEN ELIMINATION DURING THE GLOW-DISCHARGE DEPOSITION OF A-SI-H ALLOYS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (05) : 407 - 409

[8] Knights J. C., 1979, JPN J APPL PHYS, V18, P101

[9] EFFECTS OF INERT-GAS DILUTION OF SILANE ON PLASMA-DEPOSITED A-SI-H FILMS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 331 - 333

[10] GLOW-DISCHARGE PREPARATION OF AMORPHOUS HYDROGENATED SILICON FROM HIGHER SILANES [J]. APPLIED PHYSICS LETTERS, 1980, 37 (08) : 725 - 727

[1] MICROWAVE INVESTIGATION OF PLASMAS PRODUCED IN A REACTOR [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) : 527 - +

[2] PULSED HIGH-RATE PLASMA-ETCHING WITH VARIABLE SI/SIO2 SELECTIVITY AND VARIABLE SI ETCH PROFILES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1095 - 1097

[3] MEASUREMENT OF THE ELECTRON-DENSITY AND THE ATTACHMENT RATE COEFFICIENT IN SILANE HELIUM DISCHARGES [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1344 - 1348

[4] ELECTRON KINETICS OF SILANE DISCHARGES [J]. APPLIED PHYSICS LETTERS, 1983, 43 (11) : 1012 - 1014

[5] GILLARDINI AL, 1972, LOW ENERGY ELECTRON, P236

[6] AN OPTICAL-EMISSION STUDY OF THE GLOW-DISCHARGE DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON FROM ARGON-SILANE MIXTURES [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2276 - 2280

[7] HYDROGEN ELIMINATION DURING THE GLOW-DISCHARGE DEPOSITION OF A-SI-H ALLOYS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (05) : 407 - 409

[8] Knights J. C., 1979, JPN J APPL PHYS, V18, P101

[9] EFFECTS OF INERT-GAS DILUTION OF SILANE ON PLASMA-DEPOSITED A-SI-H FILMS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 331 - 333

[10] GLOW-DISCHARGE PREPARATION OF AMORPHOUS HYDROGENATED SILICON FROM HIGHER SILANES [J]. APPLIED PHYSICS LETTERS, 1980, 37 (08) : 725 - 727