ENHANCEMENT OF THE PLASMA-DENSITY AND DEPOSITION RATE IN RF DISCHARGES

被引：57

作者：

OVERZET, LJ

VERDEYEN, JT

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 11期

关键词：

D O I：

10.1063/1.96746

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：695 / 697

页数：3

共 15 条

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[7] HYDROGEN ELIMINATION DURING THE GLOW-DISCHARGE DEPOSITION OF A-SI-H ALLOYS [J].

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[8]

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APPLIED PHYSICS LETTERS, 1981, 38 (05) :331-333

[10] GLOW-DISCHARGE PREPARATION OF AMORPHOUS HYDROGENATED SILICON FROM HIGHER SILANES [J].

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SIMONYI, EE .

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