FANO RESONANCES IN QUASI-ONE-DIMENSIONAL ELECTRON WAVE-GUIDES

被引:190
作者
TEKMAN, E [1 ]
BAGWELL, PF [1 ]
机构
[1] BILKENT UNIV,DEPT PHYS,BILKENT 06533,TURKEY
来源
PHYSICAL REVIEW B | 1993年 / 48卷 / 04期
关键词
D O I
10.1103/PhysRevB.48.2553
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In the spectroscopy of atoms and molecules, an asymmetric Fano resonance arises whenever a bound state associated with one electronic configuration is coupled to the ionization continuum of a different configuration. A strikingly similar resonance appears for electronic transport in conductors with more than one subband, independent of the specific details of the system under study. We develop a two-subband approximation which describes the Fano resonances for conduction through an electron waveguide containing donor impurities, for GAMMA-X-GAMMA intervalley tunneling in a GaAs/AlxGa1-xAs/GaAs heterojunction, and for an electron waveguide coupled to a resonant cavity. Interference between the direct and intersubband transmission channels gives rise to the asymmetric Fano resonance.
引用
收藏
页码:2553 / 2559
页数:7
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