PHOTOELECTRON-SPECTRA OF CYCLOPOLYSILANES

被引：8
作者：
JANOSCHEK, R
HENGGE, E
STUGER, H
NYULASZI, L
机构：
[1] TECH UNIV BUDAPEST,INST ANORGAN CHEM,H-1521 BUDAPEST,HUNGARY
[2] GRAZ TECH UNIV,INST ANORGAN CHEM,A-8010 GRAZ,AUSTRIA
来源：
MONATSHEFTE FUR CHEMIE | 1991年 / 122卷 / 1-2期
关键词：
ABINITIO CALCULATIONS; CYCLOPOLYSILANES; PE-SPECTRA;
D O I：
10.1007/BF00815160
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
He (I) PE spectra of cyclopentasilane and cyclohexasilane show excellent agreement with STO-3 G+ ab initio calculations. The HOMO in both compounds is of sigma (SiSi) 3 p character. First IP's appear at 9.4 and 9.6 eV respectively.
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收藏
页码：31 / 34
页数：4
相关论文
共 11 条
  • [1] Bock H., 1989, CHEM ORGANIC SILICON, P555
  • [2] CYCLOPOLYSILANES - STRUCTURE, STRAIN, AND THE FORM OF THE SINGLY OCCUPIED MOLECULAR-ORBITAL IN THEIR RADICAL-ANIONS
    GREV, RS
    SCHAEFER, HF
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1987, 109 (22) : 6569 - 6577
  • [3] PREPARATION AND CHARACTERIZATION OF CYCLOHEXASILANE SI6H12
    HENGGE, E
    KOVAR, D
    [J]. ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1979, 459 (12): : 123 - 130
  • [4] PREPARATION AND PROPERTIES OF CYCLOPENTASILANE
    HENGGE, E
    BAUER, G
    [J]. MONATSHEFTE FUR CHEMIE, 1975, 106 (02): : 503 - 512
  • [5] Kimura K., 1981, HDB HEI PHOTOELECTRO
  • [6] NELSON JT, 1988, J PHYS CHEM-US, V921, P365
  • [7] GROUND-STATES AND IONIZATION ENERGIES OF SI2H6, SI3H8, SI4H10, AND SI5H12
    ORTIZ, JV
    MINTMIRE, JW
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1988, 110 (14) : 4522 - 4527
  • [8] ELECTRON-DIFFRACTION STUDY OF GASEOUS CYCLOPENTASILANE
    SMITH, Z
    SEIP, HM
    HENGGE, E
    BAUER, G
    [J]. ACTA CHEMICA SCANDINAVICA SERIES A-PHYSICAL AND INORGANIC CHEMISTRY, 1976, 30 (09): : 697 - 702
  • [9] ELECTRON-DIFFRACTION STUDY OF GASEOUS CYCLOHEXASILANE
    SMITH, Z
    ALMENNINGEN, A
    HENGGE, E
    KOVAR, D
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1982, 104 (16) : 4362 - 4366
  • [10] PE AND UV SPECTRA OF LINEAR AND CYCLIC POLYSILANES AND ASSIGNMENT BY ABINITIO CALCULATIONS
    STUGER, H
    HENGGE, E
    JANOSCHEK, R
    [J]. PHOSPHORUS SULFUR AND SILICON AND THE RELATED ELEMENTS, 1990, 48 (1-4): : 189 - 201
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