AN X-RAY-DIFFRACTION METHOD FOR CHARACTERIZATION OF SEVERAL LATTICE-MATCHED HETEROEPITAXIAL FILMS

被引:1
作者
ITOH, N [1 ]
WAKAHARA, A [1 ]
SATO, T [1 ]
PAK, K [1 ]
YOSHIDA, A [1 ]
YONEZU, H [1 ]
机构
[1] TOYOHASHI UNIV TECHNOL, DEPT ELECT & ELECTR ENGN, TOYOHASHI, AICHI 440, JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 12期
关键词
D O I
10.1143/JJAP.28.L2276
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:L2276 / L2278
页数:3
相关论文
共 7 条
[1]   CHARACTERIZATION OF STOICHIOMETRY IN GAAS BY X-RAY-INTENSITY MEASUREMENTS OF QUASI-FORBIDDEN REFLECTIONS [J].
FUJIMOTO, I .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (05) :L287-L289
[2]   HALF-WIDTH AND PEAK-INTENSITY MEASUREMENT OF A ROCKING CURVE OBTAINED FROM SILICON ON SAPPHIRE USING SOFT-X-RAY BEAMS [J].
KISHINO, S ;
IIDA, S ;
AOKI, S ;
MIZUTANI, T ;
WATANABE, T .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (07) :3138-3140
[3]  
KOU CP, 1983, J CRYST GROWTH, V64, P461
[4]   MOCVD GROWTH OF ZNSXSE1-X EPITAXIAL LAYERS LATTICE-MATCHED TO GAAS USING ALKYLS OF ZN, S AND SE [J].
MITSUHASHI, H ;
MITSUISHI, I ;
KUKIMOTO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (11) :L864-L866
[5]   CRYSTALLOGRAPHIC CHARACTERIZATION OF ZNSXSE1-X EPITAXIAL-FILMS [J].
OKAMOTO, K ;
ITOH, N ;
OGAWA, H ;
KAWABATA, T ;
KOIKE, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (05) :L756-L758
[6]   METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF IN1-XGAXP [J].
YOSHINO, J ;
IWAMOTO, T ;
KUKIMOTO, H .
JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :74-78
[7]  
ZACHARIASEN WH, 1951, THEORY XRAY DIFFRACT