共 50 条
- [41] Physically based predictive model of Si/SiO2 interface trap generation resulting from the presence of holes in the SiO2 Appl Phys Lett, 21 (3126):
- [45] INTERFACE ELECTRONIC STATE GENERATION IN SI-SIO2 SYSTEM BY AVALANCHE ELECTRON INJECTION VESTNIK MOSKOVSKOGO UNIVERSITETA SERIYA 3 FIZIKA ASTRONOMIYA, 1989, 30 (03): : 74 - 79
- [46] Scanning capacitancemicroscope study of a SiO2/Si interface modified by charge injection Appl Phys A, SUPPL. 1 (S431-S434):
- [48] CAPTURE OF HOLES AT THE SI-SIO2 INTERFACE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (07): : 825 - 826
- [50] HIGH-TEMPERATURE DECOMPOSITION OF SIO2 AT THE SI/SIO2 INTERFACE JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 1024 - 1025