CHARACTERISTIC DEFECTS GENERATED AT THE SI/SIO2 INTERFACE DURING AVALANCHE INJECTION OF HOLES

被引：1
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作者：
VENGURLEKAR, AS
LAKSHMANNA, V
RAMANATHAN, KV
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来源：
APPLICATIONS OF SURFACE SCIENCE | 1985年 / 22-3卷 / MAY期
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10.1016/0378-5963(85)90230-2
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页码：974 / 982
页数：9
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