THICKNESS DEPENDENCES OF PROPERTIES OF P-DOPED AND B-DOPED HYDROGENATED AMORPHOUS-SILICON .1. DARK CONDUCTIVITY AND PHOTOCONDUCTIVITY

被引：22
作者：
HASEGAWA, S
SHIMIZU, S
KURATA, Y
机构：
来源：
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1984年 / 49卷 / 05期
关键词：
D O I：
10.1080/13642818408227659
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：511 / 519
页数：9
相关论文
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