ELECTRON-MOBILITY IN INDIUM NITRIDE

[1] LPE AND VPE IN1-XGAXASYP1-Y-INP - TRANSPORT-PROPERTIES, DEFECTS, AND DEVICE CONSIDERATIONS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) : 150 - 161

[2] BROOKS H, 1951, PHYS REV, V23, P679

[3] CONWELL E, 1979, PHYS REV B, V20, P388

[4] FOLEY CP, 1984, APP SURF SCI, V14

[5] ANALYSIS OF POLAR OPTICAL SCATTERING OF ELECTRONS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 3121 - &

[6] ELECTRICAL AND OPTICAL PROPERTIES OF RF-SPUTTERED GAN AND INN [J]. APPLIED PHYSICS LETTERS, 1972, 20 (02) : 71 - &

[7] MECHANISMS OF REACTIVE SPUTTERING OF INDIUM .1. GROWTH OF INN IN MIXED AR-N2 DISCHARGES [J]. THIN SOLID FILMS, 1980, 69 (02) : 201 - 216

[8] SYNTHESIS OF 3-5 SEMICONDUCTOR NITRIDES BY REACTIVE CATHODIC SPUTTERING [J]. THIN SOLID FILMS, 1976, 36 (01) : 141 - 145

[9] IONIZED IMPURITY SCATTERING IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1979, 20 (08): : 3254 - 3257

[10] TANSLEY TL, 1984, 3RD P INT C SEM 3 5

[1] LPE AND VPE IN1-XGAXASYP1-Y-INP - TRANSPORT-PROPERTIES, DEFECTS, AND DEVICE CONSIDERATIONS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) : 150 - 161

[2] BROOKS H, 1951, PHYS REV, V23, P679

[3] CONWELL E, 1979, PHYS REV B, V20, P388

[4] FOLEY CP, 1984, APP SURF SCI, V14

[5] ANALYSIS OF POLAR OPTICAL SCATTERING OF ELECTRONS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 3121 - &

[6] ELECTRICAL AND OPTICAL PROPERTIES OF RF-SPUTTERED GAN AND INN [J]. APPLIED PHYSICS LETTERS, 1972, 20 (02) : 71 - &

[7] MECHANISMS OF REACTIVE SPUTTERING OF INDIUM .1. GROWTH OF INN IN MIXED AR-N2 DISCHARGES [J]. THIN SOLID FILMS, 1980, 69 (02) : 201 - 216

[8] SYNTHESIS OF 3-5 SEMICONDUCTOR NITRIDES BY REACTIVE CATHODIC SPUTTERING [J]. THIN SOLID FILMS, 1976, 36 (01) : 141 - 145

[9] IONIZED IMPURITY SCATTERING IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1979, 20 (08): : 3254 - 3257

[10] TANSLEY TL, 1984, 3RD P INT C SEM 3 5