ELECTRON-MOBILITY IN INDIUM NITRIDE

被引：94

作者：

TANSLEY, TL

FOLEY, CP

机构：

来源：

ELECTRONICS LETTERS | 1984年 / 20卷 / 25-2期

关键词：

D O I：

10.1049/el:19840729

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1066 / 1068

页数：3

共 14 条

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[8] SYNTHESIS OF 3-5 SEMICONDUCTOR NITRIDES BY REACTIVE CATHODIC SPUTTERING [J].

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[10]

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