PURITY CONSIDERATIONS FOR AMORPHOUS-SILICON THIN-FILMS

被引：0
|
作者：
DICKSON, CR
FIESELMANN, BF
OSWALD, RS
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1988年 / 89卷 / 01期
关键词：
D O I：
10.1016/0022-0248(88)90071-1
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：49 / 61
页数：13
相关论文
共 50 条
  • [1] 1/F NOISE IN AMORPHOUS-SILICON AND HYDROGENATED AMORPHOUS-SILICON THIN-FILMS
    BACIOCCHI, M
    DAMICO, A
    VANVLIET, CM
    SOLID-STATE ELECTRONICS, 1991, 34 (12) : 1439 - 1447
  • [2] NOISE MEASUREMENTS IN THIN-FILMS OF AMORPHOUS-SILICON
    DAMICO, A
    FORTUNATO, G
    VANVLIET, CM
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 499 - 502
  • [3] PHOTOELECTROCHEMICAL MEASUREMENTS OF AMORPHOUS-SILICON THIN-FILMS
    HERRERO, J
    GUTIERREZ, MT
    ELECTROCHIMICA ACTA, 1991, 36 (5-6) : 915 - 920
  • [4] FORMATION OF NANOCRYSTALLITES IN AMORPHOUS-SILICON THIN-FILMS
    SCHOENFELD, O
    ZHAO, X
    HEMPEL, T
    BLAESING, J
    AOYAGI, Y
    SUGANO, T
    JOURNAL OF CRYSTAL GROWTH, 1994, 142 (1-2) : 268 - 270
  • [5] STRESS IN POLYCRYSTALLINE AND AMORPHOUS-SILICON THIN-FILMS
    HOWE, RT
    MULLER, RS
    JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) : 4674 - 4675
  • [6] CRYSTALLIZATION IN FLUORINATED AND HYDROGENATED AMORPHOUS-SILICON THIN-FILMS
    EDELMAN, F
    CYTERMANN, C
    BRENER, R
    EIZENBERG, M
    KHAIT, YL
    WEIL, R
    BEYER, W
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (12) : 7875 - 7880
  • [7] ESCA ANALYSIS OF AMORPHOUS-SILICON NITRIDE THIN-FILMS
    ELIZALDE, E
    SORIANO, L
    PAULE, E
    GALAN, L
    VACUUM, 1987, 37 (5-6) : 488 - 489
  • [8] THE SURFACE-PROPERTIES OF SPUTTERED AMORPHOUS-SILICON THIN-FILMS
    AIDA, MS
    BACHIRI, R
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1995, 189 (1-2) : 167 - 172
  • [9] OPTICAL WAVEGUIDING BY VERY THIN-FILMS OF HYDROGATED AMORPHOUS-SILICON
    PEUZIN, JC
    OLIVIER, M
    CHENEVASPAULE, A
    CUCHET, R
    OPTICS COMMUNICATIONS, 1984, 51 (01) : 11 - 14
  • [10] BF3-DOPED AMORPHOUS-SILICON THIN-FILMS
    MAHAN, AH
    KERNS, RC
    DEVAUD, G
    JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (06) : 1033 - 1049
12345