ELECTRON TUNNELING FROM METAL TO INSB - (SEMICONDUCTOR BAND STRUCTURE - 4.2 DEGREES - MOS STRUCTURES - SINGLE CRYSTALS - E/T)

被引：15
作者：
CHANG, LL
ESAKI, L
JONA, F
机构：
来源：
APPLIED PHYSICS LETTERS | 1966年 / 9卷 / 01期
关键词：
D O I：
10.1063/1.1754581
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：21 / &
相关论文
共 13 条
[1]  
COHEN M, IN PRESS
[2]   THE KINETICS AND MECHANISM OF FORMATION OF ANODE FILMS ON SINGLE-CRYSTAL INSB [J].
DEWALD, JF .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (04) :244-251
[3]   INTERBAND TRANSITIONS IN GROUPS 4, 3-5, AND 2-6 SEMICONDUCTORS [J].
EHRENREICH, H ;
PHILLIPS, JC ;
PHILIPP, HR .
PHYSICAL REVIEW LETTERS, 1962, 8 (02) :59-&
[4]   STUDY OF ELECTRONIC BAND STRUCTURES BY TUNNELING SPECTROSCOPY - BISMUTH [J].
ESAKI, L ;
STILES, PJ .
PHYSICAL REVIEW LETTERS, 1965, 14 (22) :902-&
[5]   NEW TYPE OF NEGATIVE RESISTANCE IN BARRIER TUNNELING [J].
ESAKI, L ;
STILES, PJ .
PHYSICAL REVIEW LETTERS, 1966, 16 (24) :1108-&
[6]   EFFECT OF BAND STRUCTURE ON TUNNELING CURRENTS [J].
GOLDBERG, N ;
POLLACK, SR .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) :446-&
[7]   BAND STRUCTURE OF INTERMETALLIC SEMICONDUCTORS FROM PRESSURE EXPERIMENTS [J].
PAUL, W .
JOURNAL OF APPLIED PHYSICS, 1961, 32 :2082-&
[8]   THE OXIDATION OF INTERMETALLIC COMPOUNDS .1. HIGH TEMPERATURE OXIDATION OF INSB [J].
ROSENBERG, AJ ;
LAVINE, MC .
JOURNAL OF PHYSICAL CHEMISTRY, 1960, 64 (09) :1135-1142
[9]   THE ENERGY-DEPENDENCE OF ELECTRON MASS IN INDIUM ANTIMONIDE DETERMINED FROM MEASUREMENTS OF THE INFRARED FARADAY EFFECT [J].
SMITH, SD ;
MOSS, TS ;
TAYLOR, KW .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 11 (1-2) :131-139
[10]   OPTICAL PROPERTIES OF INDIUM OXIDE [J].
WEIHER, RL ;
LEY, RP .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) :299-&
12