NON-OHMIC ELECTRON CONDUCTION IN SILICON SURFACE INVERSION LAYERS AT LOW-TEMPERATURES

被引：25
作者：
HESS, K
NEUGROSCHEL, A
SHIUE, CC
SAH, CT
机构：
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[2] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
来源：
JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 04期
关键词：
D O I：
10.1063/1.321775
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1721 / 1727
页数：7
相关论文
共 26 条
[1]   ENERGY AND LIFETIME OF SPACE-CHARGE-INDUCED LOCALIZED STATES [J].
ALFERIEFF, ME ;
DUKE, CB .
PHYSICAL REVIEW, 1968, 168 (03) :832-+
[2]  
CONWELL EM, 1967, SOLID STATE PHYSI S9
[3]   ELECTRON-ENERGY RELAXATION-TIME IN SI AND GE [J].
COSTATO, M ;
FONTANESI, S ;
REGGIANI, L .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (03) :547-564
[4]   ELECTRON MOBILITY IN A SEMICONDUCTOR INVERSION LAYER - POSSIBLE CONTRIBUTION FROM BULK PHONONS [J].
EZAWA, H ;
KAWAJI, S ;
KURODA, T ;
NAKAMURA, K .
SURFACE SCIENCE, 1971, 24 (02) :659-&
[5]   ELECTRONS AND SURFONS IN A SEMICONDUCTOR INVERSION LAYER [J].
EZAWA, H ;
KURODA, T ;
NAKAMURA, K .
SURFACE SCIENCE, 1971, 24 (02) :654-&
[6]   HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS [J].
FANG, FF ;
FOWLER, AB .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) :1825-+
[7]   TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J].
FANG, FF ;
FOWLER, AB .
PHYSICAL REVIEW, 1968, 169 (03) :619-+
[8]  
FU HS, 1972, IEEE T ELECTRON DEVI, VED19, P273
[9]   HOT CARRIERS IN SILICON SURFACE INVERSION LAYERS [J].
HESS, K ;
SAH, CT .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) :1254-1257
[10]   WARM AND HOT CARRIERS IN SILICON SURFACE-INVERSION LAYERS [J].
HESS, K ;
SAH, CT .
PHYSICAL REVIEW B, 1974, 10 (08) :3375-3386
123