PHOTON TRANSPORT OF EXCITATION OF NONEQUILIBRIUM CARRIERS IN SEMICONDUCTORS

被引:0
|
作者
EPIFANOV, MS [1 ]
BOBROVA, EA [1 ]
GALKIN, GN [1 ]
机构
[1] PN LEBEDEV PHYS INST,MOSCOW,USSR
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1975年 / 9卷 / 08期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:1008 / 1010
页数:3
相关论文
共 50 条
  • [41] RECOMBINATION OF NONEQUILIBRIUM CARRIERS IN INDIUM ARSENIDE AT HIGH EXCITATION LEVELS
    GALKIN, GN
    KHARAKHO.FF
    SHATKOVS.EV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (03): : 387 - &
  • [42] Nonequilibrium photon production in partonic transport simulations
    Greif, Moritz
    Senzel, Florian
    Kremer, Heiner
    Zhou, Kai
    Greiner, Carsten
    Xu, Zhe
    PHYSICAL REVIEW C, 2017, 95 (05)
  • [43] EXCLUSION OF NONEQUILIBRIUM CARRIERS AT HIGH OPTICAL-EXCITATION RATES
    VEINGER, AI
    KASYMOVA, RS
    NORKULOVA, KR
    PARITSKII, LG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (03): : 338 - 339
  • [44] Transient heat transport by carriers and phonons in semiconductors
    Sánchez, AFC
    de la Cruz, GG
    Gurevich, YG
    Logvinov, GN
    PHYSICAL REVIEW B, 1999, 59 (16) : 10630 - 10638
  • [45] NONEQUILIBRIUM EXCITATION TRANSPORT IN ENERGETICALLY DISORDERED MEDIA
    PARSON, R
    KOPELMAN, R
    JOURNAL OF PHYSICAL CHEMISTRY, 1984, 88 (14): : 2931 - 2934
  • [46] CHARACTERISTICS OF THE PHOTOELECTRIC EFFECT IN A VARIABLE-GAP STRUCTURE WITH A POTENTIAL RELIEF IN THE CASE OF PHOTON TRANSPORT OF NONEQUILIBRIUM CARRIERS
    VOLKOV, AS
    PLYASKIN, BG
    TSARENKOV, BV
    TSARENKOV, GV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (11): : 1342 - 1343
  • [47] AMBIPOLAR TRANSPORT OF CARRIERS IN SEMICONDUCTORS WITH DEEP LEVELS
    ALMAZOV, AB
    MIKHAILOV, GB
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (01): : 100 - 101
  • [48] Recombination in semiconductors: Appearance of nonequilibrium carriers due to injection or redistribution in the sample
    Volovichev, Igor N.
    Espejo, Gabino
    Gurevich, Yuri G.
    Titov, Oleg Yu.
    Meriuts, Andrei
    1600, Japan Society of Applied Physics (41):
  • [49] NONEQUILIBRIUM HALL-EFFECT AND RELATED TRANSPORT PHENOMENA IN SEMICONDUCTORS UNDER INHOMOGENEOUS EXCITATION BY A LASER-PULSE
    VAITKUS, J
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 34 (02): : 769 - 775
  • [50] COHERENT LONG-WAVELENGTH PHONON EMISSION BY NONEQUILIBRIUM CARRIERS IN SEMICONDUCTORS
    GRINBERG, AA
    SOVIET PHYSICS-SOLID STATE, 1964, 6 (02): : 462 - 464