NOVEL INGAAS/GAAS QUANTUM-DOT STRUCTURES FORMED IN TETRAHEDRAL-SHAPED RECESSES ON (111)B GAAS SUBSTRATE USING METALORGANIC VAPOR-PHASE EPITAXY

被引：82

作者：

SUGIYAMA, Y

SAKUMA, Y

MUTO, S

YOKOYAMA, N

机构：

[1] Fujitsu Limited, Atsugi 243-01

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 02期

关键词：

D O I：

10.1063/1.114685

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a novel GaAs/InGaAs/GaAs quantum dot structure formed in a tetrahedral-shaped recess (TSR) patterned on a (111)B GaAs substrate with anisotropic chemical etching. The pseudomorphic heterostructure shows two clear photoluminescence peaks which are attributed to an In anisotropic incorporation on (111)B compared to (111)A. Cathodoluminescence at a lower energy peak with InGaAs of 2.5 nm shows a bright image at the bottom of TSRs which indicates the local minimum in potential energy at the bottom of TSR.© 1995 American Institute of Physics.

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页码：256 / 258

页数：3

相关论文

共 16 条

[1] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].

ARAKAWA, Y ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941

[2] INTRINSIC MECHANISM FOR THE POOR LUMINESCENCE PROPERTIES OF QUANTUM-BOX SYSTEMS [J].

BENISTY, H ;

SOTOMAYORTORRES, CM ;

WEISBUCH, C .

PHYSICAL REVIEW B, 1991, 44 (19) :10945-10948

[3] PHONON-SCATTERING AND ENERGY RELAXATION IN 2-DIMENSIONAL, ONE-DIMENSIONAL, AND ZERO-DIMENSIONAL ELECTRON GASES [J].

BOCKELMANN, U ;

BASTARD, G .

PHYSICAL REVIEW B, 1990, 42 (14) :8947-8951

[4] GAAS TETRAHEDRAL QUANTUM DOT STRUCTURES FABRICATED USING SELECTIVE AREA METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

FUKUI, T ;

ANDO, S ;

TOKURA, Y ;

TORIYAMA, T .

APPLIED PHYSICS LETTERS, 1991, 58 (18) :2018-2020

[5] 1ST STAGES OF THE MBE GROWTH OF INAS ON (001)GAAS [J].

HOUZAY, F ;

GUILLE, C ;

MOISON, JM ;

HENOC, P ;

BARTHE, F .

JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :67-72

[6] ELECTRON MOTION ON A CURVED INTERFACE [J].

IKEGAMI, M ;

NAGAOKA, Y .

SURFACE SCIENCE, 1992, 263 (1-3) :193-198

[7] SELECTIVE GROWTH OF INP/GAINAS IN LP-MOVPE AND MOMBE/CBE [J].

KAYSER, O .

JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :989-998

[8] DIRECT FORMATION OF QUANTUM-SIZED DOTS FROM UNIFORM COHERENT ISLANDS OF INGAAS ON GAAS-SURFACES [J].

LEONARD, D ;

KRISHNAMURTHY, M ;

REAVES, CM ;

DENBAARS, SP ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1993, 63 (23) :3203-3205

[9] RHEED OSCILLATION STUDIES OF MBE GROWTH-KINETICS AND LATTICE MISMATCH STRAIN-INDUCED EFFECTS DURING INGAAS GROWTH ON GAAS(100) [J].

LEWIS, BF ;

LEE, TC ;

GRUNTHANER, FJ ;

MADHUKAR, A ;

FERNANDEZ, R ;

MASERJIAN, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :419-424

[10]

MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/S0022-0248(74)80055-2