PREPARATION OF LEAD-ZIRCONATE-TITANATE THIN-FILMS BY REACTIVE EVAPORATION

被引:18
|
作者
TORII, K
SAITOH, S
OHJI, Y
机构
[1] Central Research Laboratory, Hitachi, Ltd, Kokubunji, Tokyo
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 9B期
关键词
FERROELECTRIC; REACTIVE EVAPORATION; THIN FILM; DIELECTRIC CONSTANT; OZONE; LEAKAGE CURRENT;
D O I
10.1143/JJAP.33.5287
中图分类号
O59 [应用物理学];
学科分类号
摘要
Lead zirconate titanate thin films have been successfully fabricated by reactive evaporation. Elemental Pb, Zr, and Ti were evaporated in ozone-oxygen mixture ambient. Excellent controls of uniformity of thickness and composition were achieved over a large area (within +/-2% on 4-inch wafer). The electrical properties were examined as a function of Pb content in the films. High dielectric constant (epsilon similar to 1000) and low leakage current (1.7x10(-7) A/cm(2)) were realized for the film with stoichiometric composition.
引用
收藏
页码:5287 / 5290
页数:4
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