LOW-TEMPERATURE VAPOR-PHASE EPITAXY OF UNDOPED ZNSE FILMS ON (100) GAAS USING METALLIC ZN AND SE

被引：6

作者：

MURANOI, T

KUROSAWA, K

YAMAMOTO, K

MIYOKAWA, T

SHIMIZU, M

FURUKOSHI, M

机构：

[1] Department of Electronics, Ibaraki University, Hitachi-shi

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 12期

关键词：

ZNSE EPITAXIAL GROWTH; VPE; IMPROVEMENT OF REACTION APPARATUS; REFLECTION PLATE FOR SE VAPOR; PL SPECTRUM; HALL EFFECT; HIGH ELECTRON MOBILITIES;

D O I：

10.1143/JJAP.29.2820

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-quality ZnSe films were grown at 290-degrees-C by VPE with an improved reaction apparatus: a reflection plate for Se vapor was prepared at the end of the nozzle. With this configuration, the growth rate became several times higher than that without such a plate. Exciton emissions including free exciton line were predominant. The deep level emission was very low even at RT in the PL spectrum. The electron mobility was 2410 cm2/V.s at 77 K.

引用

页码：2820 / 2821

页数：2

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