TECHNOLOGY COMPUTER-AIDED DESIGN AND STUDY OF PROTOTYPES OF A SILICON ZENER DIODE

被引：0
|
作者：
Dudar, N. L. [1 ]
Borzdov, V. M. [2 ]
Turtsevich, A. S. [1 ]
机构：
[1] Joint Stock Co JSC INTEGRAL, 12 Korzhenevskii Str, Minsk 220108, BELARUS
[2] Belarusian State Univ, Minsk 220030, BELARUS
来源：
JOURNAL OF ENGINEERING PHYSICS AND THERMOPHYSICS | 2014年 / 87卷 / 04期
关键词：
Zener diode; stabilizing voltage; technology computer-aided design; technological route; diffusion doping;
D O I：
10.1007/s10891-014-1097-y
中图分类号：
O414.1 [热力学];
学科分类号：
摘要：
A technology for manufacture of a silicon Zener diode with a stabilizing voltage of 6.5 V has been proposed. The resistivity of the substrate and the regime of phosphorus diffusion into the substrate have been determined, which ensure required values of the stabilizing voltage under room-temperature conditions and at two boundary temperatures: -55 and 150 degrees C. Modeling data have been compared to experimental results.
引用
收藏
页码：997 / 1001
页数：5
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