MODEL FOR ELECTRICAL BEHAVIOR OF MICROPLASMA

被引：188

作者：

HAITZ, RH

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1964年 / 35卷 / 05期

关键词：

D O I：

10.1063/1.1713636

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1370 / &

共 15 条

[1] MICROPLASMA FLUCTUATIONS IN SILICON [J].

CHAMPLIN, KS .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (07) :1039-1050

[2] EFFECT OF DISLOCATIONS ON BREAKDOWN IN SILICON P-N JUNCTIONS [J].

CHYNOWETH, AG ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1958, 29 (07) :1103-1110

[3] INTERNAL FIELD EMISSION IN SILICON P-N JUNCTIONS [J].

CHYNOWETH, AG ;

MCKAY, KG .

PHYSICAL REVIEW, 1957, 106 (03) :418-426

[4] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .1. LOCALIZED PHOTOMULTIPLICATION STUDIES ON MICROPLASMAS [J].

HAITZ, RH ;

GOETZBERGER, A ;

SCARLETT, RM ;

SHOCKLEY, W .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) :1581-&

[5] AVALANCHE NOISE STUDY IN MICROPLASMAS AND UNIFORM JUNCTIONS [J].

HAITZ, RH ;

GOETZBERGER, A .

SOLID-STATE ELECTRONICS, 1963, 6 (06) :678-&

[6]

HAITZ RH, 1962, B AM PHYS SOC, V7, P603

[7]

HAITZ RH, 1962, B AM PHYS SOC, V7, P536

[8]

HAITZ RH, 1963, B AM PHYS SOC, V8, P594

[9] VISIBLE LIGHT EMISSION AND MICROPLASMA PHENOMENA IN SILICON P-N JUNCTION .1. [J].

KIKUCHI, M ;

TACHIKAWA, K .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1960, 15 (05) :835-848

[10]

LEE CA, 1962, B AM PHYS SOC, V7, P536

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