HALL-EFFECT IN A NON HOMOGENEOUS MAGNETIC-FIELD

被引：8

作者：

DEMEY, G ^{[1
]}

机构：

[1] GHENT STATE UNIV, ELECTR LAB, B-9000 GHENT, BELGIUM

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 02期

关键词：

D O I：

10.1016/0038-1101(77)90063-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：139 / 142

页数：4

共 50 条

[21] MAGNETIC-FIELD DEPENDENCE OF ACTIVATION-ENERGIES IN THE FRACTIONAL QUANTUM HALL-EFFECT
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[28] CONDUCTIVITY AND HALL-EFFECT OF HEAVILY DOPED SEMICONDUCTORS AT LOW-TEMPERATURES IN A WEAK MAGNETIC-FIELD
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[29] THE ELECTRONS OF 2-D SYSTEM IN STRONG MAGNETIC-FIELD AND FRACTIONALLY QUANTIZED HALL-EFFECT
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[30] THE INFLUENCE OF A TILTED MAGNETIC-FIELD ON THE FRACTIONAL QUANTUM HALL-EFFECT AND THE EXCHANGE ENHANCEMENT OF THE SPIN SPLITTING
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