CHEMICALLY VAPOR-DEPOSITED TUNGSTEN, GRAIN-REFINED AND STABILIZED

被引：7

作者：

BRYANT, WA ^{[1
]}

机构：

[1] WESTINGHOUSE ELECT CORP,ASTRONUCL LAB,POB 10864,PITTSBURGH,PA 15236

来源：

JOURNAL OF THE LESS-COMMON METALS | 1976年 / 45卷 / 01期

关键词：

D O I：

10.1016/0022-5088(76)90194-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：37 / 44

页数：8

共 50 条

[41] COMPARATIVE-STUDY OF TRIMETHYLBORON DOPING OF HOT-FILAMENT CHEMICALLY VAPOR-DEPOSITED AND MICROWAVE PLASMA CHEMICALLY VAPOR-DEPOSITED DIAMOND FILMS
POLO, MC
CIFRE, J
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ESTEVE, J
THIN SOLID FILMS, 1994, 253 (1-2) : 136 - 140
[42] GRAIN-GROWTH CHARACTERISTICS OF VAPOR-DEPOSITED TUNGSTEN AT TEMPERATURES UP TO 2500DEGREESC
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[43] CRYSTALLINE TUNGSTEN GROWN BY REDUCING VAPOR-DEPOSITED TUNGSTEN-OXIDE
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[44] ADHERENCE OF CHEMICALLY VAPOR DEPOSITED TUNGSTEN COATINGS
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[45] ELECTROMIGRATION-INDUCED SHORT-CIRCUIT FAILURE IN ALUMINUM UNDERLAID WITH CHEMICALLY VAPOR-DEPOSITED TUNGSTEN
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[46] FIELD-ION MICROSCOPY STUDY OF CHEMICALLY VAPOR-DEPOSITED MOLYBDENUM AND TUNGSTEN THIN-FILMS
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[47] MECHANICAL-PROPERTIES OF CHEMICALLY VAPOR-DEPOSITED NONOXIDE CERAMICS
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[48] FRACTURE STRENGTH OF FREESTANDING CHEMICALLY VAPOR-DEPOSITED DIAMOND FILMS
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APPLIED PHYSICS LETTERS, 1995, 66 (23) : 3105 - 3107
[49] Chemically vapor-deposited silicon carbide films for surface protection
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[50] OXIDATION OF CHEMICALLY VAPOR-DEPOSITED SILICON-NITRIDE FILMS
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SATO, J
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