NON-VOLATILE SEMICONDUCTOR MEMORY

[1] BERESFORD R, 1981, ELECTRONICS 0210, P37

[2] CHERRICK F, 1980, WESCON PROGRAM, V14

[3] INTERFACE EFFECTS AND HIGH CONDUCTIVITY IN OXIDES GROWN FROM POLYCRYSTALLINE SILICON [J]. APPLIED PHYSICS LETTERS, 1975, 27 (09) : 505 - 507

[4] DRORI J, 1981, IEEE INT SOLID STATE, P148

[5] ELLIS R, 1982, NONVOLATILE MEMORY W

[6] HAGIWARA T, 1979, ISSCC DIGEST, P50

[7] HNATEK E, 1981, COMPUTER DESIGN DEC, P137

[8] HNATEK ER, 1980, COMPUTER DESIGN 2, P119

[9] HNATEK ER, 1979, COMPUTER DESIGN 1, P67

[10] HNATEK ER, 1980, COMPUTER DESIGN 3, P147

[1] BERESFORD R, 1981, ELECTRONICS 0210, P37

[2] CHERRICK F, 1980, WESCON PROGRAM, V14

[3] INTERFACE EFFECTS AND HIGH CONDUCTIVITY IN OXIDES GROWN FROM POLYCRYSTALLINE SILICON [J]. APPLIED PHYSICS LETTERS, 1975, 27 (09) : 505 - 507

[4] DRORI J, 1981, IEEE INT SOLID STATE, P148

[5] ELLIS R, 1982, NONVOLATILE MEMORY W

[6] HAGIWARA T, 1979, ISSCC DIGEST, P50

[7] HNATEK E, 1981, COMPUTER DESIGN DEC, P137

[8] HNATEK ER, 1980, COMPUTER DESIGN 2, P119

[9] HNATEK ER, 1979, COMPUTER DESIGN 1, P67

[10] HNATEK ER, 1980, COMPUTER DESIGN 3, P147