DIFFUSION AND SEGREGATION OF ION-IMPLANTED BORON IN SILICON IN DRY OXYGEN AMBIENTS

被引：27
作者：
MURARKA, SP [1 ]
机构：
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源：
PHYSICAL REVIEW B | 1975年 / 12卷 / 06期
关键词：
D O I：
10.1103/PhysRevB.12.2502
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：2502 / 2519
页数：18
相关论文
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