PREPARATION AND PROPERTIES OF A POLYSILOXANE ELECTRON RESIST

被引：26

作者：

ROBERTS, ED ^{[1
]}

机构：

[1] MULLARD RES LABS,REDHILL,SURREY,ENGLAND

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 12期

关键词：

D O I：

10.1149/1.2403351

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1716 / 1721

页数：6

共 15 条

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[3] EXPOSURE OF PHOTORESISTS - ELECTRON BEAM EXPOSURE OF NEGATIVE PHOTORESISTS [J].

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[4] HIGH-RESOLUTION POSITIVE RESISTS FOR ELECTRON-BEAM EXPOSURE [J].

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[5] OPTICAL PROPERTIES OF SILICON MONOXIDE IN THE WAVELENGTH REGION FROM 0.24 TO 14.0 MICRONS [J].

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[6] POLYMERIC ELECTRON BEAM RESISTS [J].

KU, HY ;

SCALA, LC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) :980-&

[7]

LEESMITH A, 1960, SPECTROCHIM ACTA, V16, P87

[8]

MAEKAWA A, 1970, 4 INT C EL ION BEAM, P503

[9]

ROBERTS ED, 1968, 3 INT C EL ION BEAM, P571

[10]

ROBERTS ED, 1972, 5 INT C EL ION BEAM, P102

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