SIGN OF RAMAN TENSOR OF DIAMOND AND ZINCBLENDE-TYPE SEMICONDUCTORS

被引：23

作者：

CARDONA, M ^{[1
]}

CERDEIRA, F ^{[1
]}

FJELDLY, TA ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPER FORSCH,STUTTGART,WEST GERMANY

来源：

PHYSICAL REVIEW B | 1974年 / 10卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.10.3433

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3433 / 3435

页数：3

共 22 条

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BELL, MI ;

TYTE, RN ;

CARDONA, M .

SOLID STATE COMMUNICATIONS, 1973, 13 (11) :1833-1837

[2]

BELL MI, 1972, 11TH P INT C PHYS SE, P845

[3] PSEUDOPOTENTIAL CALCULATION OF TRANSVERSE EFFECTIVE CHARGES FOR III-V AND II-VI COMPOUNDS OF ZINC-BLENDE STRUCTURE [J].

BENNETT, BI ;

MARADUDIN, AA .

PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (10) :4146-+

[4] RAMAN TENSOR OF GERMANIUM AND ZINCBLENDE-TYPE SEMICONDUCTORS [J].

CARDONA, M .

SOLID STATE COMMUNICATIONS, 1971, 9 (11) :819-&

[5]

Cardona M, 1972, ATOMIC STRUCTURE PRO, P514

[6]

CARDONA M, 1969, MODULATION SPECTROSC, P12

[7] INTERACTION BETWEEN ELECTRONIC AND VIBRONIC RAMAN-SCATTERING IN HEAVILY DOPED SILICON [J].

CERDEIRA, F ;

FJELDLY, TA ;

CARDONA, M .

SOLID STATE COMMUNICATIONS, 1973, 13 (03) :325-328

[8]

CERDEIRA F, 1974, PHYS REV B, V8, P4734

[9]

DALGARNO A, 1961, QUANTUM THEORY, P181

[10]

FANO U, 1961, PHYS REV, V124, P1886

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