LOW-TEMPERATURE CRYSTALLIZATION OF SPUTTERED CARBON-FILMS

被引：9
|
作者：
YANEZLIMON, JM
RUIZ, F
GONZALEZHERNANDEZ, J
CHAO, BS
OVSHINSKY, SR
机构：
[1] ENERGY CONVERS DEVICES,TROY,MI 48084
[2] UNIV AUTONOMA SAN LUIS,INST FIS,SAN LUIS POTOSI,MEXICO
来源：
JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 05期
关键词：
D O I：
10.1063/1.360051
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The crystallization of amorphous carbon films, under inert atmospheres, occurs at annealing temperatures above 800 degrees C. In this work we have found that when the annealing of carbon films is performed under atmospheric conditions, crystallization occurs at temperatures as low as 200 degrees C. The catalytic effect of oxygen in the crystallization process is understood in terms of the generation of a porous structure in the carbon film due to the vaporization of carbon oxides. (C) 1995 American Institute of Physics.
引用
收藏
页码：3015 / 3019
页数：5
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