INSITU EPITAXIAL SILICON OXIDE-DOPED POLYSILICON STRUCTURES FOR MOS FIELD-EFFECT TRANSISTORS

被引：13

作者：

STURM, JC

GRONET, CM

KING, CA

WILSON, SD

GIBBONS, JF

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

[2] CHARLES EVANS & ASSOCIATES,SAN MATEO,CA 94402

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 10期

关键词：

D O I：

10.1109/EDL.1986.26479

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：577 / 579

页数：3

共 10 条

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Nagao S., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P593

[8] LIMITED REACTION PROCESSING - INSITU METAL-OXIDE-SEMICONDUCTOR CAPACITORS [J].

STURM, JC ;

GRONET, CM ;

GIBBONS, JF .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (05) :282-284

[9] MINORITY-CARRIER PROPERTIES OF THIN EPITAXIAL SILICON FILMS FABRICATED BY LIMITED REACTION PROCESSING [J].

STURM, JC ;

GRONET, CM ;

GIBBONS, JF .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (12) :4180-4182

[10] ELECTRON-MOBILITY IN INVERSION AND ACCUMULATION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES [J].

SUN, SC ;

PLUMMER, JD .

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