THE ENERGY OF THE DANGLING-BOND STATES IN A-SI

被引：73
作者：
LECOMBER, PG
SPEAR, WE
机构：
来源：
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1986年 / 53卷 / 01期
关键词：
D O I：
10.1080/13642818608238960
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：L1 / L7
页数：7
相关论文
共 19 条
[1]   IDENTIFICATION OF THE DANGLING-BOND STATE WITHIN THE MOBILITY GAP OF ALPHA-SI-H BY DEPLETION-WIDTH-MODULATED ELECTRON-SPIN-RESONANCE SPECTROSCOPY [J].
COHEN, JD ;
HARBISON, JP ;
WECHT, KW .
PHYSICAL REVIEW LETTERS, 1982, 48 (02) :109-112
[2]   CALCULATION OF THE DYNAMIC-RESPONSE OF SCHOTTKY BARRIERS WITH A CONTINUOUS DISTRIBUTION OF GAP STATES [J].
COHEN, JD ;
LANG, DV .
PHYSICAL REVIEW B, 1982, 25 (08) :5321-5350
[3]   PHOTOINDUCED CHANGES IN THE BULK-DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON ASSOCIATED WITH THE STAEBLER-WRONSKI EFFECT [J].
COHEN, JD ;
LANG, DV ;
HARBISON, JP ;
SERGENT, AM .
SOLAR CELLS, 1983, 9 (1-2) :119-131
[4]   SPACE-CHARGE SPECTROSCOPY OF THE GAP STATES IN HYDROGENATED AMORPHOUS-SILICON COUNTERDOPED WITH BORON [J].
CULLEN, P ;
HARBISON, JP ;
LANG, DV ;
ADLER, D .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :261-264
[5]   ELECTRON-SPIN RESONANCE OF DOPED GLOW-DISCHARGE AMORPHOUS-SILICON [J].
DERSCH, H ;
STUKE, J ;
BEICHLER, J .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 105 (01) :265-274
[6]  
HEPBURN AR, 1985, UNPUB J NONCRYSTALLI
[7]  
JACKSON WB, 1982, PHYS REV B, V25, P559
[8]   DEEP-LEVEL DISTRIBUTIONS IN HYDROGENATED AMORPHOUS-SILICON [J].
JOHNSON, NM .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :265-268
[9]   IDENTIFICATION OF DEEP-GAP STATES IN ALPHA-SI-H BY PHOTODEPOPULATION-INDUCED ELECTRON-SPIN RESONANCE [J].
JOHNSON, NM ;
BIEGELSEN, DK .
PHYSICAL REVIEW B, 1985, 31 (06) :4066-4069
[10]   MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY [J].
LANG, DV ;
COHEN, JD ;
HARBISON, JP .
PHYSICAL REVIEW B, 1982, 25 (08) :5285-5320
12