ELECTRICAL CHARACTERIZATION OF SILICON SURFACE AFTER REACTIVE ION ETCHING OF SILICON DIOXIDE BY CHF3

被引：0
|
作者：
TONG, KY
YIP, KW
FUNG, WM
机构：
[1] Department of Electronic Engineering, Hong Kong Polytechnic, Hung Hom
来源：
MICROELECTRONICS AND RELIABILITY | 1990年 / 30卷 / 06期
关键词：
D O I：
10.1016/0026-2714(90)90289-Y
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have conducted a comprehensive investigation into the electrical characteristics of Si surface after removal of a SiO2 layer by CHF3 reactive ion etching. The metal-semiconductor contact structure was used in the study, including the results after heating the metal-semiconductor contact to its eutectic temperature. It is concluded that after CHF3 etching the surface is trapped with positive charge, which is partly removed by heating the metal-semiconductor contact to its eutectic temperature.
引用
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页码：1111 / 1116
页数：6
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