THE ANNEALING BEHAVIOR OF THE G=2.0026 ELECTRON-SPIN-RESONANCE LINE IN A-SI-H

被引：11

作者：

CARLOS, WE

机构：

来源：

关键词：

D O I：

10.1016/0022-3093(84)90315-6

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：157 / 161

页数：5

共 11 条

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[5] GLOW-DISCHARGE A-SI1-XCX - H FILMS STUDIED BY ELECTRON-SPIN-RESONANCE AND IR MEASUREMENTS
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (02): : L119 - L121
[6] ELECTRON-SPIN-RESONANCE AND IR STUDIES ON A-SI1-XGEX-H PREPARED BY GLOW-DISCHARGE DECOMPOSITION
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SHIMIZU, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : L833 - L836
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