A COLLECTOR-UP ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR FABRICATED USING 3-STAGE MOCVD

被引：3

作者：

KAWAI, H

KOBAYASHI, T

KANEKO, K

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 08期

关键词：

D O I：

10.1109/55.764

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：419 / 421

页数：3

相关论文

共 4 条

[1] GAAS/(GA,AL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH BURIED OXYGEN-IMPLANTED ISOLATION LAYERS [J].

ASBECK, PM ;

MILLER, DL ;

ANDERSON, RJ ;

EISEN, FH .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (08) :310-312

[2] ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED USING A SELF-ALIGNED DUAL-LIFT-OFF PROCESS [J].

CHANG, MCF ;

ASBECK, PM ;

WANG, KC ;

SULLIVAN, GJ ;

SHENG, NH ;

HIGGINS, JA ;

MILLER, DL .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (07) :303-305

[3]

ISHIBASHI T, 1986, INT ELECTRON DEVICE, P86

[4] MOCVD-GROWN ALGAAS GAAS HBTS WITH EPITAXIALLY EMBEDDED P+ LAYERS IN EXTRINSIC BASE [J].

TAIRA, K ;

KAWAI, H ;

KANEKO, K .

ELECTRONICS LETTERS, 1987, 23 (19) :989-990