CHEMICALLY-FORMED BUFFER LAYERS FOR GROWTH OF CUBIC SILICON-CARBIDE ON SILICON SINGLE-CRYSTALS

被引：46

作者：

ADDAMIANO, A

KLEIN, PH

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 70卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(84)90276-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：291 / 294

页数：4

共 9 条

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[6] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES [J].

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