INFRARED MODULATION OF PHOTOLUMINESCENCE IN GLOW-DISCHARGE AMORPHOUS-SILICON

被引：0

作者：

VARMAZIS, C ^{[1
]}

HIRSCH, MD ^{[1
]}

VANIER, PE ^{[1
]}

机构：

[1] BROOKHAVEN NATL LAB,DIV MET & MAT SCI,UPTON,NY 11973

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中图分类号：

O59 [应用物理学];

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引用

页码：133 / 140

页数：8

共 8 条

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BHAT, PK ;

DUNSTAN, DJ ;

AUSTIN, IG ;

SEARLE, TM .

[2]

CARIUS R, 1984, J NONCRYST SOLIDS

[3] RECOMBINATION IN LOW DEFECT DENSITY A-SI-H [J].

DERSCH, H ;

SCHWEITZER, L .

ENCK, RC ;

HONIG, A .

PHYSICAL REVIEW, 1969, 177 (03) :1182-&

OCONNOR, P ;

TAUC, J .

PHYSICAL REVIEW B, 1982, 25 (04) :2748-2766

[6] DUAL-BEAM PHOTOCONDUCTIVITY MODULATION SPECTROSCOPY IN A-SI-H [J].

PERSANS, PD .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (05) :435-471

[7]

VANIER PE, 1982, J APPL PHYS, V52, P5135

[8]

VANIER PE, 1984, SEMICONDUCTORS SEM B, V21, pCH10