共 50 条
- [23] PROPERTIES OF THE AL/MO/TI/PTSI/SI METALLIZATION SYSTEM CHINESE PHYSICS, 1988, 8 (04): : 1097 - 1101
- [25] PREPARATION OF CU9AL4 INTERMETALLIC COMPOUND FILMS AS A METALLIZATION MATERIAL FOR LSI TECHNOLOGY JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (4A): : L624 - L627
- [26] Preparation of Cu9Al4 intermetallic compound films as a metallization material for LSI technology Noya, Atsushi, 1600, (30):
- [27] Influence of Si/Al ratio on Auger line intensities of zeolites ZEOLITES, 1996, 17 (03): : 310 - 313
- [28] AUGER SATELLITES OF L2,3 AUGER EMISSION BANDS OF AL, SI, AND P PHYSICAL REVIEW B, 1974, 9 (11): : 4618 - 4627