HIGH-EFFICIENCY, THIN-FILM GAAS SOLAR-CELLS

[1] ANDERSON CL, 1980, P S LASER ELECTRON B, V80

[2] AUSTON DH, 1979, P SPIE, V198

[3] BELL AE, 1979, RCA REV, V40, P295

[4] SIMPLIFIED FABRICATION OF GAAS HOMOJUNCTION SOLAR-CELLS WITH INCREASED CONVERSION EFFICIENCIES [J]. APPLIED PHYSICS LETTERS, 1978, 32 (06) : 390 - 392

[5] FERRIS SD, 1979, LASER SOLID INTERACT, V50

[6] ANODIC-OXIDATION OF GAAS IN MIXED SOLUTIONS OF GLYCOL AND WATER [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) : 713 - 723

[7] LASER IRRADIATION OF SILICON CONTAINING MISFIT DISLOCATIONS [J]. APPLIED PHYSICS LETTERS, 1979, 34 (10) : 690 - 692

[8] DEPTH OF DEFECT ANNIHILATION IN SILICON BY PULSE LASER ANNEALING - EXPERIMENT AND THEORY [J]. APPLIED PHYSICS LETTERS, 1979, 35 (08) : 608 - 611

[9] SCHOTTKY-BARRIER SOLAR-CELL ON SLICED POLYCRYSTALLINE GAAS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 401 - 403

[10] YEH YCM, 1978, 13TH P IEEE PHOT SPE

[1] ANDERSON CL, 1980, P S LASER ELECTRON B, V80

[2] AUSTON DH, 1979, P SPIE, V198

[3] BELL AE, 1979, RCA REV, V40, P295

[4] SIMPLIFIED FABRICATION OF GAAS HOMOJUNCTION SOLAR-CELLS WITH INCREASED CONVERSION EFFICIENCIES [J]. APPLIED PHYSICS LETTERS, 1978, 32 (06) : 390 - 392

[5] FERRIS SD, 1979, LASER SOLID INTERACT, V50

[6] ANODIC-OXIDATION OF GAAS IN MIXED SOLUTIONS OF GLYCOL AND WATER [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) : 713 - 723

[7] LASER IRRADIATION OF SILICON CONTAINING MISFIT DISLOCATIONS [J]. APPLIED PHYSICS LETTERS, 1979, 34 (10) : 690 - 692

[8] DEPTH OF DEFECT ANNIHILATION IN SILICON BY PULSE LASER ANNEALING - EXPERIMENT AND THEORY [J]. APPLIED PHYSICS LETTERS, 1979, 35 (08) : 608 - 611

[9] SCHOTTKY-BARRIER SOLAR-CELL ON SLICED POLYCRYSTALLINE GAAS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 401 - 403

[10] YEH YCM, 1978, 13TH P IEEE PHOT SPE