HOLE TRANSPORT IN MOS OXIDES

被引：54

作者：

HUGHES, RC ^{[1
]}

EERNISSE, EP ^{[1
]}

STEIN, HJ ^{[1
]}

机构：

[1] SANDIA LABS, ALBUQUERQUE, NM 87115 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1975年 / 22卷 / 06期

关键词：

D O I：

10.1109/TNS.1975.4328110

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：2227 / 2233

页数：7

相关论文

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[9] EFFECT OF BOMBARDMENT BY GLASS-FORMING IONS ON THERMALLY STIMULATED IONIC-CONDUCTIVITY OF SODIUM IN SIO2
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[10] BULK RECOMBINATION OF CHARGE-CARRIERS IN POLYMER FILMS - POLY-N-VINYLCARBAZOLE COMPLEXED WITH TRINITROFLUORENONE
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