A dual-band reconfigurable direct-conversion receiver RF front-end

被引：0
|
作者：
Yao Guoqin [1 ]
Chi Baoyong [1 ]
Zhang Chun [1 ]
Wang Zhihua [1 ]
机构：
[1] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2009年 / 30卷 / 09期
基金：
中国国家自然科学基金;
关键词：
RF; CMOS; reconfigurable receiver; direct-conversion; switchable inductor;
D O I：
10.1088/1674-4926/30/9/095008
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A dual-band reconfigurable wireless receiver RF front-end is presented, which is based on the direct conversion principle and consists of a low noise amplifier (LNA) and a down-converter. By utilizing a compact switchable on-chip symmetrical inductor, the RF front-end could be switched between two operation frequency bands without extra die area cost. This RF front-end has been implemented in the 180 nm CMOS process and the measured results show that the front-end could provide a gain of 25 dB and IIP3 of 6 dBm at 2.2 GHz, and a gain of 18.8 dB and IIP3 of 7.3 dBm at 4.5 GHz. The whole front-end consumes 12 mA current at 1.2 V voltage supply for the LNA and 2.1 mA current at 1.8 V for the mixer, with a die area of 1.2 x 1 mm(2).
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页数：5
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