HYDROGENATED AMORPHOUS-SILICON GROWTH BY CO2-LASER PHOTO-DISSOCIATION OF SILANE

被引:52
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BILENCHI, R
GIANINONI, I
MUSCI, M
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10.1063/1.331494
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O59 [应用物理学];
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页码:6479 / 6481
页数:3
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共 11 条
[1]   LOW-TEMPERATURE GROWTH OF POLYCRYSTALLINE SI AND GE FILMS BY ULTRAVIOLET-LASER PHOTO-DISSOCIATION OF SILANE AND GERMANE [J].
ANDREATTA, RW ;
ABELE, CC ;
OSMUNDSEN, JF ;
EDEN, JG ;
LUBBEN, D ;
GREENE, JE .
APPLIED PHYSICS LETTERS, 1982, 40 (02) :183-185
[2]  
BILENCHI R, 1980, P EUROPEAN C OPTICAL
[3]  
BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556
[4]   STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J].
BRODSKY, MH ;
TITLE, RS ;
WEISER, K ;
PETTIT, GD .
PHYSICAL REVIEW B, 1970, 1 (06) :2632-&
[5]   MULTIPLE PHOTON EXCITED SF6 INTERACTION WITH SILICON SURFACES [J].
CHUANG, TJ .
JOURNAL OF CHEMICAL PHYSICS, 1981, 74 (02) :1453-1460
[6]   INFRARED-LASER PHOTOCHEMISTRY OF SILANE [J].
DEUTSCH, TF .
JOURNAL OF CHEMICAL PHYSICS, 1979, 70 (03) :1187-1192
[7]   SPATIALLY DELINEATED GROWTH OF METAL-FILMS VIA PHOTOCHEMICAL PRE-NUCLEATION [J].
EHRLICH, DJ ;
OSGOOD, RM ;
DEUTSCH, TF .
APPLIED PHYSICS LETTERS, 1981, 38 (11) :946-948
[8]   LASER-INDUCED VAPOR-DEPOSITION OF SILICON [J].
HANABUSA, M ;
NAMIKI, A ;
YOSHIHARA, K .
APPLIED PHYSICS LETTERS, 1979, 35 (08) :626-627
[9]  
KARLOV NV, 1973, SOV PHYS JETP, V37, P1012
[10]   STRUCTURAL-PROPERTIES OF SILICON THIN-FILMS DEPOSITED BY GLOW-DISCHARGE [J].
MESSANA, C ;
DEANGELIS, BA ;
CONTE, G ;
GRAMACCIONI, C .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1981, 14 (06) :L91-L94