Exciton states in InxGa1-xAs/GaAs double quantum wells: Normalized reflection spectral

被引：1

作者：

DAndrea, A

Tomassini, N

Ferrari, L

Righini, M

Selci, S

Bruni, MR

Simeoni, G

机构：

[1] CNR,IST STRUTTURA MAT,I-00044 FRASCATI,ITALY

[2] CNR,IST CHIM MAT,I-00016 ROME,ITALY

来源：

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS | 1995年 / 17卷 / 11-12期

关键词：

Conference proceedings; Excitons and related phenomena (including electron-hole drops); Surface and interface electron states;

D O I：

10.1007/BF02457221

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Normalized reflection spectra in GaInAs/GaAs quantum wells are shown for two sets of samples with different alloy concentration (x = 9% and 18.5%) and well thickness ranging from 1.5 nm to 25 nm. All samples were grown on (001)GaAs surface by Molecular Beam Epitaxy and characterized by RHEED and X-ray reflection diffraction. Exciton envelope function in effective mass approximation and optical response in polaritonic schema are computed. Normalized reflection spectroscopy has shown itself to be a well suited technique in order to study structural and electronic properties of confined quantum structures.

引用

页码：1423 / 1427

页数：5

共 3 条

[1] EXCITON PROPERTIES AND OPTICAL-RESPONSE IN INXGA1-XAS/GAAS STRAINED QUANTUM-WELLS
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TOMASSINI, N
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[2] MADELUNG O, 1982, LANDOLTBORNSTEIN NUM
[3] EVALUATION OF ELECTRON-PHONON COUPLING OF AL0.27GA0.73AS/GAAS QUANTUM-WELLS BY NORMAL INCIDENCE REFLECTANCE
SELCI, S
CRICENTI, A
RIGHINI, M
PETRILLO, C
SACCHETTI, F
ALEXANDRE, F
CHIAROTTI, G
[J]. SOLID STATE COMMUNICATIONS, 1991, 79 (07) : 561 - 565

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