STRUCTURAL AND ELECTRICAL-PROPERTIES OF TA2O5 GROWN BY THE PLASMA-ENHANCED LIQUID SOURCE CVD USING PENTA-ETHOXY TANTALUM SOURCE

被引：64

作者：

MURAWALA, PA ^{[1
]}

SAWAI, M ^{[1
]}

TATSUTA, T ^{[1
]}

TSUJI, O ^{[1
]}

FUJITA, S ^{[1
]}

机构：

[1] KYOTO UNIV,DEPT ELECT ENGN,KYOTO 60601,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 1B期

关键词：

PE-LS-CVD; TA2O5; TA(OC2H5)5 SOURCE; X-RAY; AES; SIMS; OTS; WELL-DEFINED C-V; LOW LEAKAGE CURRENT; HIGH DIELECTRIC CONSTANT; RAPID THERMAL ANNEALING;

D O I：

10.1143/JJAP.32.368

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on structural and electrical properties of tantalum penta oxide (Ta2O5) material with a high dielectric constant grown from a penta ethoxy tantalum [Ta(OC2H5)5] liquid source by the plasma-enhanced liquid source chemical vapor deposition (PE-LS-CVD) technique. We have investigated several basic plasma deposition conditions. Structural properties investigated by theta-2theta X-ray measurements showed the amorphous nature of the films, and Auger electron spectrosopy (AES) and secondary ion mass spectroscopy (SIMS) indicated growth of Ta2O5 films having proper stoichiometry (Ta/O=0.4). Optical transmission spectroscopy showed that the band gap (E(g)) of Ta2O5 is 5.28 eV. Electrical measurements performed on Au/Ta2O5/n, p-Si metal oxide semiconductor (MOS) structure exhibited very well defined capacitance-voltage (C-V) characteristics with flat band voltage as low as -0.1 eV, low leakage current, high breakdown voltage and high dielectric constant (25-38). As a hitherto unreported step in Ta2O5 processing we also performed rapid thermal (RTA) annealing at 700-degrees-C and 900-degrees-C for 5 min which resulted in much improved electrical properties. All results suggest growth of high-quality Ta2O5 films from a carbon-based Ta liquid source, due to an effect of plasma-enhanced deposition process.

引用

页码：368 / 375

页数：8

共 13 条

[1] PHOTO-PROCESS OF TANTALUM OXIDE-FILMS AND THEIR CHARACTERISTICS [J].

MATSUI, M ;

OKA, S ;

YAMAGISHI, K ;

KUROIWA, K ;

TARUI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (04) :506-511

[2]

MORT J, 1986, PLASMA DEPOSITED THI, P23

[3]

MURAWALA PA, 1992, MATER RES SOC SYMP P, V265, P319, DOI 10.1557/PROC-265-319

[4]

MURAWALA PA, 1992, 1992 INT C SOL STAT, P527

[5]

Numasawa Y., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P43, DOI 10.1109/IEDM.1989.74224

[6]

Saitoh M., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P680

[7] OXIDIZED TA2O5/SI3N4 DIELECTRIC FILMS ON POLYCRYSTALLINE SI FOR DRAMS [J].

SHINRIKI, H ;

NISHIOKA, Y ;

OHJI, Y ;

MUKAI, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (02) :328-332

[8] UV-O3 AND DRY-O2 - 2-STEP ANNEALED CHEMICAL VAPOR-DEPOSITED TA2O5 FILMS FOR STORAGE DIELECTRICS OF 64-MB DRAMS [J].

SHINRIKI, H ;

NAKATA, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (03) :455-462

[9]

SINRIKI H, 1991, 1991 INT C SOL STAT, P198

[10]

TANIMOTO S, 1990, 1990 INT C SOL STAT, pL195

← 1 2 →