INFRARED-SPECTROSCOPY OF OXIDE LAYERS ON TECHNICAL SI WAFERS

被引：100

作者：

GROSSE, P ^{[1
]}

HARBECKE, B ^{[1
]}

HEINZ, B ^{[1
]}

MEYER, R ^{[1
]}

OFFENBERG, M ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST HALBLEITERTECH,D-5100 AACHEN,FED REP GER

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1986年 / 39卷 / 04期

关键词：

D O I：

10.1007/BF00617270

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：257 / 268

页数：12

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