A MODEL FOR BAND-GAP SHRINKAGE IN SEMICONDUCTORS WITH APPLICATION TO SILICON

被引：17
作者：
LANDSBERG, PT
NEUGROSCHEL, A
LINDHOLM, FA
SAH, CT
机构：
[1] UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611
[2] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1985年 / 130卷 / 01期
关键词：
D O I：
10.1002/pssb.2221300125
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：255 / 266
页数：12
相关论文
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