HIGHLY CONDUCTIVE AND WIDE BAND-GAP AMORPHOUS-MICROCRYSTALLINE MIXED-PHASE SILICON FILMS PREPARED BY PHOTOCHEMICAL VAPOR-DEPOSITION

被引:50
作者
NISHIDA, S
TASAKI, H
KONAGAI, M
TAKAHASHI, K
机构
关键词
D O I
10.1063/1.336071
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1427 / 1431
页数:5
相关论文
共 27 条
[1]   FACTORS INFLUENCING THE EFFICIENCY OF AMORPHOUS-SILICON SOLAR-CELLS [J].
CARLSON, DE .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :707-717
[2]   SILANE PURIFICATION VIA LASER-INDUCED CHEMISTRY [J].
CLARK, JH ;
ANDERSON, RG .
APPLIED PHYSICS LETTERS, 1978, 32 (01) :46-49
[3]  
EMELEUS HJ, 1936, T FARADAY SOC, V22, P1577
[4]   HIGH-RATE DEPOSITION OF AMORPHOUS HYDROGENATED SILICON FROM A SIH4 PLASMA [J].
HAMASAKI, T ;
UEDA, M ;
CHAYAHARA, A ;
HIROSE, M ;
OSAKA, Y .
APPLIED PHYSICS LETTERS, 1984, 44 (06) :600-602
[5]   EFFECT OF BORON DOPING AND ITS PROFILE ON CHARACTERISTICS OF P-I-N A-SI-H SOLAR-CELLS [J].
HARUKI, H ;
SAKAI, H ;
KAMIYAMA, M ;
UCHIDA, Y .
SOLAR ENERGY MATERIALS, 1983, 8 (04) :441-455
[6]   REACTION OF DIBORANE WITH HG 6(P-3)1 ATOMS [J].
HIRATA, T ;
GUNNING, HE .
JOURNAL OF CHEMICAL PHYSICS, 1957, 27 (02) :477-480
[7]  
HIROSE M, 1981, TETRAHEDRALLY BONDED, P10
[8]   PHOTOCHEMICAL VAPOR-DEPOSITION OF UNDOPED AND N-TYPE AMORPHOUS-SILICON FILMS PRODUCED FROM DISILANE [J].
INOUE, T ;
KONAGAI, M ;
TAKAHASHI, K .
APPLIED PHYSICS LETTERS, 1983, 43 (08) :774-776
[10]   HYDROGEN ELIMINATION DURING THE GLOW-DISCHARGE DEPOSITION OF A-SI-H ALLOYS [J].
KAMPAS, FJ ;
GRIFFITH, RW .
APPLIED PHYSICS LETTERS, 1981, 39 (05) :407-409