MN-IMPURITY-INDUCED SIMPLE PAIR DEFECT STATES IN BI-MODIFIED AMORPHOUS-SEMICONDUCTORS GE20S79.5-XBIXMN0.5

被引：7

作者：

BHATNAGAR, VK ^{[1
]}

BHATIA, KL ^{[1
]}

BHATNAGAR, V ^{[1
]}

机构：

[1] MAHRSHI DAYANAND UNIV,DEPT PHYS,ROHTAK 124001,INDIA

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1990年 / 61卷 / 06期

关键词：

D O I：

10.1080/13642819008207859

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Measurements of the a.c. conductivity of Bi-modified Mn-doped semiconducting glasses Ge20S79.5-xBixMn0.5 have been carried out in the frequency range 100Hz-10kHz and at temperatures from 180 to 445 K for the first time. The a.c. conductivity of samples doped with Mn does not follow the well known relation σa c. =AωS. A pronounced peak in the temperature dependence of the a.c. conductivity is found. The experimental results are interpreted in terms of a simple pair model. The analysis reveals that Mn impurities induce defect states deep in the band gap which form simple pairs with the same intersite separation for all pairs. © 1990 Taylor & Francis Ltd.

引用

页码：1021 / 1031

页数：11

共 22 条

[1] MORPHOLOGICAL STRUCTURE OF BISMUTH-DOPED N-TYPE AMORPHOUS-GERMANIUM SULFIDE SEMICONDUCTORS [J].