THE EFFECT OF INCIDENCE ANGLE ON DISORDER PRODUCTION IN ION-IMPLANTED SI

被引：1
|
作者：
SUKIRNO
CARTER, G
机构：
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1989年 / 108卷 / 2-4期
关键词：
D O I：
10.1080/10420158908230307
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
引用
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页码：163 / 183
页数：21
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