THE EFFECT OF INCIDENCE ANGLE ON DISORDER PRODUCTION IN ION-IMPLANTED SI

被引：1
|
作者：
SUKIRNO
CARTER, G
机构：
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1989年 / 108卷 / 2-4期
关键词：
D O I：
10.1080/10420158908230307
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
引用
收藏
页码：163 / 183
页数：21
相关论文
共 50 条
  • [1] THE INFLUENCE OF INCIDENCE ANGLE ON DISORDER PRODUCTION IN CL AND AR ION-IMPLANTED SI
    SUKIRNO
    CARTER, G
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1989, 108 (2-4): : 211 - 225
  • [2] DISORDER PRODUCTION IN ION-IMPLANTED SILICON
    KERKOW, H
    LUKASCH, B
    PIPPIG, R
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 70 (02): : 489 - 495
  • [3] DISORDER PRODUCTION AND AMORPHIZATION IN ION-IMPLANTED SILICON
    THOMPSON, DA
    GOLANSKI, A
    HAUGEN, KH
    STEVANOVIC, DV
    CARTER, G
    CHRISTODOULIDES, CE
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 52 (1-2): : 69 - 84
  • [4] THE EFFECT OF THE ANGLE OF INCIDENCE ON THE AQUEOUS CORROSION OF ION-IMPLANTED M50 STEEL SUBSTRATES
    RANGEL, CM
    SIMPLICIO, MH
    CONSIGLIERI, AC
    NIELSEN, BR
    TORP, B
    TEIXEIRA, N
    ALVES, JG
    SILVA, MF
    SOARES, JC
    DODD, A
    KINDER, J
    SURFACE & COATINGS TECHNOLOGY, 1992, 51 (1-3): : 483 - 488
  • [5] AN ANOMALOUS EFFECT IN ANGLE LAPPING AND STAINING ION-IMPLANTED LAYERS
    PICCO, P
    POLIGNANO, ML
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (09) : 2034 - 2036
  • [6] Nanomechanical properties of ion-implanted Si
    Nagy, P. M.
    Aranyi, D.
    Horvath, P.
    Peto, G.
    Kalman, E.
    SURFACE AND INTERFACE ANALYSIS, 2008, 40 (3-4) : 875 - 880
  • [7] Interstitial defects in ion-implanted Si
    Kovacevic, I
    Borjanovic, V
    Pivac, B
    VACUUM, 2003, 71 (1-2) : 129 - 133
  • [8] EPR OF ION-IMPLANTED DONORS IN SI
    BROWER, KL
    BORDERS, JA
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (03): : 267 - &
  • [9] DECHANNELING BY DISLOCATIONS IN ION-IMPLANTED SI
    GRUSKA, B
    GOTZ, G
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 59 (3-4): : 157 - 167
  • [10] STRUCTURAL DISORDER IN ION-IMPLANTED SILICON
    MOSS, SC
    FLYNN, P
    BAUER, LO
    ACTA CRYSTALLOGRAPHICA SECTION A, 1972, 28 : S157 - S157
12345