SILICON AND BERYLLIUM DOPING OF OMVPE GROWN AL0-0.3GAL-0-0.3 USING SILANE AND DIETHYLBERYLLIUM

被引:14
作者
BOTTKA, N
SILLMON, RS
TSENG, WF
机构
关键词
D O I
10.1016/0022-0248(84)90397-X
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:54 / 59
页数:6
相关论文
共 19 条
[1]  
AEBI V, 1981, J CRYSTAL GROWTH, V55, P5217
[2]  
ASHBY EC, 1981, J ORGANOMET CHEM, V14, P1
[3]   SILICON AND GERMANIUM DOPING OF EPITAXIAL GALLIUM-ARSENIDE GROWN BY THE TRIMETHYLGALLIUM-ARSINE METHOD [J].
BASS, SJ .
JOURNAL OF CRYSTAL GROWTH, 1979, 47 (5-6) :613-618
[4]  
CARDONA M, 1969, SOLID STATE PHYSIC S, V11
[5]  
CASEY HC, 1978, HETEROSTRUCTURE LA A, P191
[6]   HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE [J].
DAPKUS, PD ;
MANASEVIT, HM ;
HESS, KL ;
LOW, TS ;
STILLMAN, GE .
JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :10-23
[7]  
GILMAN H, 1972, J CHEM SOC, P2663
[8]   THE VARIATION OF THE P/N JUNCTION POSITION IN GAAS/GAA1AS DOUBLE HETEROSTRUCTURES GROWN BY LOW-PRESSURE MO VPE [J].
HERSEE, SD ;
BALDY, M ;
DUCHEMIN, JP .
JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (02) :345-357
[9]  
HIRTZ JP, 1980, APPL PHYS LETT, V36, P796
[10]   HETEROEPITAXIAL GAAS ON ALUMINUM-OXIDE - FORMATION AND ELECTRICAL PROPERTIES OF ZN-DOPED AND CD-DOPED FILMS [J].
MANASEVIT, HM ;
THORSEN, AC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (01) :99-+