SILICON AND BERYLLIUM DOPING OF OMVPE GROWN AL0-0.3GAL-0-0.3 USING SILANE AND DIETHYLBERYLLIUM

被引：14

作者：

BOTTKA, N

SILLMON, RS

TSENG, WF

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 68卷 / 01期

关键词：

D O I：

10.1016/0022-0248(84)90397-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：54 / 59

页数：6

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[10] HETEROEPITAXIAL GAAS ON ALUMINUM-OXIDE - FORMATION AND ELECTRICAL PROPERTIES OF ZN-DOPED AND CD-DOPED FILMS [J].

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