ARGON-ION ASSISTED ETCHING OF SILICON BY MOLECULAR CHLORINE

被引：83

作者：

KOLFSCHOTEN, AW ^{[1
]}

HARING, RA ^{[1
]}

HARING, A ^{[1
]}

DEVRIES, AE ^{[1
]}

机构：

[1] FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 10期

关键词：

D O I：

10.1063/1.332890

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3813 / 3818

页数：6

共 19 条

[1] SURFACE STUDIES OF AND A MASS BALANCE MODEL FOR AR+ ION-ASSISTED CL-2 ETCHING OF SI
BARKER, RA
MAYER, TM
PEARSON, WC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01): : 37 - 42
[2] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING
COBURN, JW
WINTERS, HF
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196
[3] MAGNETICALLY SUSPENDED CROSS-CORRELATION CHOPPER IN MOLECULAR BEAM-SURFACE EXPERIMENTS
COMSA, G
DAVID, R
SCHUMACHER, BJ
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1981, 52 (06) : 789 - 797
[4] DEVRIES AE, 1980, 1980 P S SPUTT VIENN, P256
[5] PLASMA CHEMICAL PHYSICS IN THE ELECTRONICS INDUSTRY
DIELEMAN, J
[J]. THIN SOLID FILMS, 1981, 86 (2-3) : 147 - 164
[6] ION-ENHANCED GAS-SURFACE CHEMISTRY - THE INFLUENCE OF THE MASS OF THE INCIDENT ION
GERLACHMEYER, U
COBURN, JW
KAY, E
[J]. SURFACE SCIENCE, 1981, 103 (01) : 177 - 188
[7] ION ENHANCED GAS-SURFACE REACTIONS - A KINETIC-MODEL FOR THE ETCHING MECHANISM
GERLACHMEYER, U
[J]. SURFACE SCIENCE, 1981, 103 (2-3) : 524 - 534
[8] MASS AND ENERGY-DISTRIBUTION OF PARTICLES SPUTTER ETCHED FROM SI IN A XEF2 ENVIRONMENT
HARING, RA
HARING, A
SARIS, FW
DEVRIES, AE
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (02) : 174 - 176
[9] ENERGY-DISTRIBUTION OF SPUTTERED CLUSTERS
KONNEN, GP
TIP, A
VRIES, AED
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 26 (1-2): : 23 - 29
[10] SURFACE-ENERGY BANDS AND ATOMIC POSITION OF CL CHEMISORBED ON CLEAVED SI(111)
LARSEN, PK
SMITH, NV
SCHLUTER, M
FARRELL, HH
HO, KM
COHEN, ML
[J]. PHYSICAL REVIEW B, 1978, 17 (06): : 2612 - 2619

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