ARGON-ION ASSISTED ETCHING OF SILICON BY MOLECULAR CHLORINE

被引：83

作者：

KOLFSCHOTEN, AW ^{[1
]}

HARING, RA ^{[1
]}

HARING, A ^{[1
]}

DEVRIES, AE ^{[1
]}

机构：

[1] FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 10期

关键词：

D O I：

10.1063/1.332890

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3813 / 3818

页数：6

共 19 条

[1] SURFACE STUDIES OF AND A MASS BALANCE MODEL FOR AR+ ION-ASSISTED CL-2 ETCHING OF SI [J].

BARKER, RA ;

MAYER, TM ;

PEARSON, WC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01) :37-42

[2] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J].

COBURN, JW ;

WINTERS, HF .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3189-3196

[3] MAGNETICALLY SUSPENDED CROSS-CORRELATION CHOPPER IN MOLECULAR BEAM-SURFACE EXPERIMENTS [J].

COMSA, G ;

DAVID, R ;

SCHUMACHER, BJ .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1981, 52 (06) :789-797

[4]

DEVRIES AE, 1980, 1980 P S SPUTT VIENN, P256

[5] PLASMA CHEMICAL PHYSICS IN THE ELECTRONICS INDUSTRY [J].

DIELEMAN, J .

THIN SOLID FILMS, 1981, 86 (2-3) :147-164

[6] ION-ENHANCED GAS-SURFACE CHEMISTRY - THE INFLUENCE OF THE MASS OF THE INCIDENT ION [J].

GERLACHMEYER, U ;

COBURN, JW ;

KAY, E .

SURFACE SCIENCE, 1981, 103 (01) :177-188

[7] ION ENHANCED GAS-SURFACE REACTIONS - A KINETIC-MODEL FOR THE ETCHING MECHANISM [J].

GERLACHMEYER, U .

SURFACE SCIENCE, 1981, 103 (2-3) :524-534

[8] MASS AND ENERGY-DISTRIBUTION OF PARTICLES SPUTTER ETCHED FROM SI IN A XEF2 ENVIRONMENT [J].

HARING, RA ;

HARING, A ;

SARIS, FW ;

DEVRIES, AE .

APPLIED PHYSICS LETTERS, 1982, 41 (02) :174-176

[9] ENERGY-DISTRIBUTION OF SPUTTERED CLUSTERS [J].

KONNEN, GP ;

TIP, A ;

VRIES, AED .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 26 (1-2) :23-29

[10] SURFACE-ENERGY BANDS AND ATOMIC POSITION OF CL CHEMISORBED ON CLEAVED SI(111) [J].

LARSEN, PK ;

SMITH, NV ;

SCHLUTER, M ;

FARRELL, HH ;

HO, KM ;

COHEN, ML .

PHYSICAL REVIEW B, 1978, 17 (06) :2612-2619

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